IRGP4263DPbF - International Rectifier

IRGP4263DPbF Insulated Gate Bipolar Transistor

  VCES = 650V IC = 60A, TC =100°C IRGP4263DPbF IRGP4263D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode  C   tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 48A Applications • Industrial Motor Drive • UPS • Solar Inverters • Welding G E n-channel G Gate GCE IRGP4263DPbF  TO‐247AC  C Collector E GC IRGP4263D‐EPbF  TO.

Features

Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE (ON) temperature coefficient 5.5µs short circuit SOA Lead-free, RoHS compliant Benefits High efficiency in a wide range of applications and switching frequencies Improved reliability due to rugged hard switching performance and higher power capability Enables short circuit protection scheme Environmentally friendly Base part number IRGP4263DPbF IRGP4263D-EPbF Package Type TO-247AC TO-247AD Standard Pack Form Quantity Tube 25 Tube 25 Orderable Part Number IRGP4263DPbF I.