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IRGP4263DPbF |
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| Part Number | IRGP4263DPbF |
| Manufacturer | International Rectifier |
| Description | VCES = 650V IC = 60A, TC =100°C IRGP4263DPbF IRGP4263D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 48A... |
| Features |
Low VCE(ON) and switching losses
Square RBSOA and maximum junction temperature 175°C Positive VCE (ON) temperature coefficient 5.5µs short circuit SOA Lead-free, RoHS compliant
Benefits High efficiency in a wide range of applications and switching frequencies
Improved reliability due to rugged hard switching performance and higher power capability
Enables short circuit protection scheme
Environmentally friendly
Base part number
IRGP4263DPbF IRGP4263D-EPbF
Package Type
TO-247AC TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRGP4263DPbF I... |
| Document |
 IRGP4263DPbF Data Sheet
PDF 920.92KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRGP4263D-EPbF |
International Rectifier |
Insulated Gate Bipolar Transistor |
|
| 2 | IRGP4263-EPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 3 | IRGP4263PBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 4 | IRGP4262D-EPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 5 | IRGP4262DPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|