IRGP4266PBF - International Rectifier

IRGP4266PBF INSULATED GATE BIPOLAR TRANSISTOR

IRGP4266PbF IRGP4266-EPbF Insulated Gate Bipolar Transistor VCES = 650V IC = 90A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 75A Applications  Industrial Motor Drive  Inverters  UPS  Welding G E C G G C G E C G IRGP4266-EPbF TO-247AD E n-channel G Gate IRGP4266PbF TO-247AC C Collector E Emitter Features Low VCE(ON) and sw.

Features

Low VCE(ON) and switching Losses Square RBSOA and Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient 5.5µs short circuit SOA Lead-Free, RoHS compliant Base part number IRGP4266PbF IRGP4266-EPbF Package Type TO-247AC TO-247AD  Benefits High efficiency in a wide range of applications and switching frequencies Improved reliability due to rugged hard switching performance and higher power capability Excellent current sharing in parallel operation Enables short circuit protection scheme Environmentally friendly Standard Pack Form Quantity Tube Tube 25 25 Orderable Part.