IRGP4065DPBF - International Rectifier

IRGP4065DPBF PDP TRENCH IGBT

This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features combine to m.

Features

l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery Circuits in PDP Applications TM) l Low VCE(on) and Energy per Pulse (EPULSE for Improved Panel Efficiency l High Repetitive Peak Current Capability l Lead Free Package www.DataSheet4U.com PD - 97101 Key Parameters VCE min VCE(ON) typ. @ IC = 70A IRP max @ TC= 25°C c TJ max C 300 1.75 205 150 C V V A °C G E G E C n-channel G G ate C C ollector TO-247AC E E m itter Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology t.