IRGP30B60KD-EP - International Rectifier

IRGP30B60KD-EP INSULATED GATE BIPOLAR TRANSISTOR

PD - 95120A IRGP30B60KD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coefficient. TO-247AD Package Lead-Free C VCES = .

Features

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• Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coefficient. TO-247AD Package Lead-Free C VCES = 600V IC = 30A, TC=100°C G E tsc > 10µs, TJ=150°C n-channel VCE(on) typ. = 1.95V Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation. TO-247AD Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ T C = 25°C IF @ TC = 10.