IRGP20B120U-E - IRF

IRGP20B120U-E INSULATED GATE BIPOLAR TRANSISTOR

PD- 94117 IRGP20B120U-E INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast Non Punch Through (NPT) Technology • 10 µs Short Circuit capability • Square RBSOA • Positive VCE(on) Temperature Coefficient • Extended lead TO-247 package UltraFast IGBT C VCES = 1200V G E VCE(on) typ. = 3.05V VGE = 15V, IC = 20A, 25°C Benefits • Benchmark efficiency above .

Features

• UltraFast Non Punch Through (NPT) Technology
• 10 µs Short Circuit capability
• Square RBSOA
• Positive VCE(on) Temperature Coefficient
• Extended lead TO-247 package UltraFast IGBT C VCES = 1200V G E VCE(on) typ. = 3.05V VGE = 15V, IC = 20A, 25°C Benefits
• Benchmark efficiency above 20KHz
• Optimized for Welding, UPS, and Induction Heating applications
• Rugged with UltraFast performance
• Low EMI
• Significantly Less Snubber required
• Excellent Current sharing in Parallel operation
• Longer leads for easier mounting n-channel TO-247AD Absolute Maximum Ratings Parameter VCES IC @ T.