IRGP20B120UD-E - IRF

IRGP20B120UD-E INSULATED GATE BIPOLAR TRANSISTOR

PD- 93817 IRGP20B120UD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast Non Punch Through (NPT) Technology • Low Diode VF (1.67V Typical @ 20A & 25°C) • 10 µs Short Circuit Capability • Square RBSOA • UltraSoft Diode Recovery Characteristics • Positive VCE(on) Temperature Coefficient • Extended Lead TO-247AD Packag.

Features

• UltraFast Non Punch Through (NPT) Technology
• Low Diode VF (1.67V Typical @ 20A & 25°C)
• 10 µs Short Circuit Capability
• Square RBSOA
• UltraSoft Diode Recovery Characteristics
• Positive VCE(on) Temperature Coefficient
• Extended Lead TO-247AD Package C UltraFast CoPack IGBT VCES = 1200V VCE(on) typ. = 3.05V G VGE = 15V, IC = 20A, 25°C E N-channel Benefits
• Benchmark Efficiency Above 20KHz
• Optimized for Welding, UPS, and Induction Heating Applications
• Rugged with UltraFast Performance
• Low EMI
• Significantly Less Snubber Required
• Excellent Current Sharing in Parallel Operat.