IRGP20B120U-EP - International Rectifier

IRGP20B120U-EP INSULATED GATE BIPOLAR TRANSISTOR

www.DataSheet4U.com PD- 95897 IRGP20B120U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast Non Punch Through (NPT) Technology • 10 µs Short Circuit capability • Square RBSOA • Positive VCE(on) Temperature Coefficient • Extended lead TO-247 package • Lead-Free UltraFast IGBT C VCES = 1200V G E VCE(on) typ. = 3.05V VGE = 15V, IC = 20A, 25°C Benef.

Features

• UltraFast Non Punch Through (NPT) Technology • 10 µs Short Circuit capability • Square RBSOA • Positive VCE(on) Temperature Coefficient • Extended lead TO-247 package • Lead-Free UltraFast IGBT C VCES = 1200V G E VCE(on) typ. = 3.05V VGE = 15V, IC = 20A, 25°C Benefits • Benchmark efficiency above 20KHz • Optimized for Welding, UPS, and Induction Heating applications • Rugged with UltraFast performance • Low EMI • Significantly Less Snubber required • Excellent Current sharing in Parallel operation • Longer leads for easier mounting n-channel TO-247AD Absolute Maximum Ratings Parameter.