Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. TO-220AB Absolute Maximum Ratings .
• Switching-loss rating includes all "tail" losses
• Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve
G E C
UltraFast IGBT
VCES = 500V VCE(sat) ≤ 3.0V
@VGE = 15V, I C = 7.5A
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.
TO-220AB
Absolute Maximum Rati.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRGB420U |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
2 | IRGB420UD2 |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
3 | IRGB4045DPbF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
4 | IRGB4055PBF |
International Rectifier |
PDP TRENCH IGBT | |
5 | IRGB4056DPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
6 | IRGB4059DPbF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
7 | IRGB4060DPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
8 | IRGB4061DPbF |
International Rectifier |
IGBT | |
9 | IRGB4062DPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
10 | IRGB4064DPbF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
11 | IRGB4065PBF |
International Rectifier |
IGBT | |
12 | IRGB4086PbF |
International Rectifier |
PDP Trench IGBT |