Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide v.
EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Max.
29 20 100 68 0.45 ± 20 65 16 6.8 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf
•in (1.1N
•m)
Units
A W W/°C V mJ A mJ V/ns °C
Thermal Resistance
Parameter
RθJC RθCS RθJA Junction-to-Case Case-to-.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFZ34N |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
2 | IRFZ34N |
International Rectifier |
Power MOSFET | |
3 | IRFZ34N |
ART CHIP |
Power MOSFET | |
4 | IRFZ34NL |
International Rectifier |
Power MOSFET | |
5 | IRFZ34NLPBF |
International Rectifier |
Power MOSFET | |
6 | IRFZ34NS |
International Rectifier |
Power MOSFET | |
7 | IRFZ34NS |
INCHANGE |
N-Channel MOSFET | |
8 | IRFZ34NSPBF |
International Rectifier |
Power MOSFET | |
9 | IRFZ34 |
Fairchild Semiconductor |
Power MOSFET | |
10 | IRFZ34 |
Samsung Electronics |
N-Channel Power MOSFET | |
11 | IRFZ34 |
International Rectifier |
Power MOSFET | |
12 | IRFZ34 |
Vishay |
Power MOSFET |