Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in.
34NL) is available for low- profile applications. Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Thermal Resistance RθJC RθJA www.irf.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFZ34NS |
International Rectifier |
Power MOSFET | |
2 | IRFZ34NS |
INCHANGE |
N-Channel MOSFET | |
3 | IRFZ34N |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
4 | IRFZ34N |
International Rectifier |
Power MOSFET | |
5 | IRFZ34N |
ART CHIP |
Power MOSFET | |
6 | IRFZ34NL |
International Rectifier |
Power MOSFET | |
7 | IRFZ34NLPBF |
International Rectifier |
Power MOSFET | |
8 | IRFZ34NPBF |
International Rectifier |
HEXFET Power MOSFET | |
9 | IRFZ34 |
Fairchild Semiconductor |
Power MOSFET | |
10 | IRFZ34 |
Samsung Electronics |
N-Channel Power MOSFET | |
11 | IRFZ34 |
International Rectifier |
Power MOSFET | |
12 | IRFZ34 |
Vishay |
Power MOSFET |