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IRFZ34NPBF |
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| Part Number | IRFZ34NPBF |
| Manufacturer | International Rectifier |
| Description | Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switchi... |
| Features |
EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Max.
29 20 100 68 0.45 ± 20 65 16 6.8 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf •in (1.1N •m) Units A W W/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-... |
| Document |
 IRFZ34NPBF Data Sheet
PDF 178.90KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRFZ34N |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 2 | IRFZ34N |
International Rectifier |
Power MOSFET |
|
| 3 | IRFZ34N |
ART CHIP |
Power MOSFET |
|
| 4 | IRFZ34NL |
International Rectifier |
Power MOSFET |
|
| 5 | IRFZ34NLPBF |
International Rectifier |
Power MOSFET |
|