·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 250 ±30 V V ID Drain Current-Continuous 10.2 A IDM Drain Current-Single Pluse 40.8 A PD Total Dissipation @TC=25℃ 73 W TJ Max. Operating Jun.
·Avalanche Rugged Technology
·Rugged Gate Oxide Technology
·Lower Input Capacitance
·Improved Gate Charge
·Extended Safe Operating Area
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Continuous
250 ±30
V V
ID Drain Current-Continuous
10.2 A
IDM Drain Current-Single Pluse
40.8 A
PD Total Dissipation @TC=25℃
73 W
TJ
Max. Operating Junction Temperature
-55~150 ℃
Tstg Storage Temperature
-55~150 ℃
THERMAL CHARACTERISTICS
.
$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ .
$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFS244 |
Fairchild Semiconductor |
Power MOSFET | |
2 | IRFS244B |
Fairchild |
250V N-Channel MOSFET | |
3 | IRFS240A |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
4 | IRFS240A |
Fairchild Semiconductor |
Advanced Power MOSFET | |
5 | IRFS240B |
Fairchild |
200V N-Channel MOSFET | |
6 | IRFS23N15D |
IRF |
Power MOSFET | |
7 | IRFS23N15D |
INCHANGE |
N-Channel MOSFET | |
8 | IRFS23N15DPbF |
International Rectifier |
SMPS MOSFET | |
9 | IRFS23N20D |
IRF |
Power MOSFET | |
10 | IRFS23N20D |
INCHANGE |
N-Channel MOSFET | |
11 | IRFS23N20DPBF |
International Rectifier |
SMPS MOSFET | |
12 | IRFS250A |
Inchange Semiconductor |
N-Channel MOSFET Transistor |