·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 200 ±30 V V ID Drain Current-Continuous 12.8 A IDM Drain Current-Single Pluse 80 A PD Total Dissipation @TC=25℃ 73 W TJ Max. Operating Junct.
·Avalanche Rugged Technology
·Rugged Gate Oxide Technology
·Lower Input Capacitance
·Improved Gate Charge
·Extended Safe Operating Area
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Continuous
200 ±30
V V
ID Drain Current-Continuous
12.8 A
IDM Drain Current-Single Pluse
80 A
PD Total Dissipation @TC=25℃
73 W
TJ
Max. Operating Junction Temperature
-55~150 ℃
Tstg Storage Temperature
-55~150 ℃
THERMAL CHARACTERISTICS
S.
www.DataSheet4U.com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFS240B |
Fairchild |
200V N-Channel MOSFET | |
2 | IRFS244 |
Fairchild Semiconductor |
Power MOSFET | |
3 | IRFS244A |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
4 | IRFS244A |
Fairchild Semiconductor |
Power MOSFET | |
5 | IRFS244A |
Fairchild Semiconductor |
Power MOSFET | |
6 | IRFS244B |
Fairchild |
250V N-Channel MOSFET | |
7 | IRFS23N15D |
IRF |
Power MOSFET | |
8 | IRFS23N15D |
INCHANGE |
N-Channel MOSFET | |
9 | IRFS23N15DPbF |
International Rectifier |
SMPS MOSFET | |
10 | IRFS23N20D |
IRF |
Power MOSFET | |
11 | IRFS23N20D |
INCHANGE |
N-Channel MOSFET | |
12 | IRFS23N20DPBF |
International Rectifier |
SMPS MOSFET |