These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited.
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• 12.8A, 200V, RDS(on) = 0.18Ω @VGS = 10 V Low gate charge ( typical 45 nC) Low Crss ( typical 45 pF) Fast switching 100% avalanche tested Improved dv/dt capability
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TO-3PF
IRFS Series
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Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
IRFS240B 200 12.8 8.1 51.2 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W/°C °C °C
Gate-Source V.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFS240A |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
2 | IRFS240A |
Fairchild Semiconductor |
Advanced Power MOSFET | |
3 | IRFS244 |
Fairchild Semiconductor |
Power MOSFET | |
4 | IRFS244A |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
5 | IRFS244A |
Fairchild Semiconductor |
Power MOSFET | |
6 | IRFS244A |
Fairchild Semiconductor |
Power MOSFET | |
7 | IRFS244B |
Fairchild |
250V N-Channel MOSFET | |
8 | IRFS23N15D |
IRF |
Power MOSFET | |
9 | IRFS23N15D |
INCHANGE |
N-Channel MOSFET | |
10 | IRFS23N15DPbF |
International Rectifier |
SMPS MOSFET | |
11 | IRFS23N20D |
IRF |
Power MOSFET | |
12 | IRFS23N20D |
INCHANGE |
N-Channel MOSFET |