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Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D²PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) .
·With TO-263( D²PAK ) packaging
·High speed switching
·Low gate input resistance
·Standard level gate drive
·Easy to use
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Power supply
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
200
VGS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
24
PD
Total Dissipation @TC=25℃
3.8
Tj
Max. Operating Junction Temperature
-55~175
Tstg
Storage Temperature
-55~175
UNIT V V A W ℃ ℃
IRFS23N20D
·THERMA.
IRFS23N20D - IRF
PD- 93904A SMPS MOSFET IRFB23N20D IRFS23N20D IRFSL23N20D HEXFET® Power MOSFET l Applications High frequency DC-DC co.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRFS23N20DPBF |
International Rectifier |
SMPS MOSFET |
|
| 2 | IRFS23N15D |
IRF |
Power MOSFET |
|
| 3 | IRFS23N15D |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IRFS23N15DPbF |
International Rectifier |
SMPS MOSFET |
|
| 5 | IRFS240A |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 6 | IRFS240A |
Fairchild Semiconductor |
Advanced Power MOSFET |
|
| 7 | IRFS240B |
Fairchild |
200V N-Channel MOSFET |
|
| 8 | IRFS244 |
Fairchild Semiconductor |
Power MOSFET |
|
| 9 | IRFS244A |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 10 | IRFS244A |
Fairchild Semiconductor |
Power MOSFET |
|
| 11 | IRFS244A |
Fairchild Semiconductor |
Power MOSFET |
|
| 12 | IRFS244B |
Fairchild |
250V N-Channel MOSFET |
|