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IRFR110 - Vishay Siliconix

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IRFR110 Power MOSFET

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation levels up to 1.5 W are possible in typical surface mount applica.

Features


• Dynamic dV/dt rating
• Repetitive avalanche rated
• Surface-mount (IRFR110, SiHFR110)
• Available in tape and reel
• Fast switching
• Ease of paralleling Available
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation levels up to 1.5 W are p.

The same part from a different manufacturer

Datasheet IRFR110 - Intersil Corporation IRFR110

IRFR110, IRFU110 Data Sheet July 1999 File Number 3275.3 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs These are N-Cha.

Datasheet IRFR110 - International Rectifier IRFR110

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Datasheet IRFR110 - Fairchild Semiconductor IRFR110

Data Sheet IRFR110, IRFU110 January 2002 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs These are N-Channel enhancemen.

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