Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation levels up to 1.5 W are possible in typical surface mount applica.
• Dynamic dV/dt rating
• Repetitive avalanche rated
• Surface-mount (IRFR110, SiHFR110)
• Available in tape and reel
• Fast switching
• Ease of paralleling
Available
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation levels up to 1.5 W are p.
IRFR110, IRFU110 Data Sheet July 1999 File Number 3275.3 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs These are N-Cha.
Data Sheet IRFR110, IRFU110 January 2002 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs These are N-Channel enhancemen.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFR110A |
Samsung |
Power MOSFET | |
2 | IRFR1010Z |
International Rectifier |
AUTOMOTIVE MOSFET | |
3 | IRFR1010Z |
INCHANGE |
N-Channel MOSFET | |
4 | IRFR1010ZPBF |
International Rectifier |
AUTOMOTIVE MOSFET | |
5 | IRFR1018E |
INCHANGE |
N-Channel MOSFET | |
6 | IRFR1018EPbF |
International Rectifier |
Power MOSFET | |
7 | IRFR120 |
International Rectifier |
POWER MOSFET | |
8 | IRFR120 |
Intersil Corporation |
N-Channel Power MOSFETs | |
9 | IRFR120 |
Vishay Siliconix |
Power MOSFET | |
10 | IRFR1205 |
International Rectifier |
Power MOSFET | |
11 | IRFR1205 |
INCHANGE |
N-Channel MOSFET | |
12 | IRFR1205PBF |
International Rectifier |
Power MOSFET |