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isc N-Channel MOSFET Transistor IRFR1018E, IIRFR1018E ·FEATURES ·Static drain-source on-resistance: RDS(on)≤8.4mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Speed Power Switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Sou.
·Static drain-source on-resistance:
RDS(on)≤8.4mΩ
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·High Speed Power Switching
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
60
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
79
IDM
Drain Current-Single Pulsed
315
PD
Total Dissipation @TC=25℃
110
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rt.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRFR1018EPbF |
International Rectifier |
Power MOSFET |
|
| 2 | IRFR1010Z |
International Rectifier |
AUTOMOTIVE MOSFET |
|
| 3 | IRFR1010Z |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IRFR1010ZPBF |
International Rectifier |
AUTOMOTIVE MOSFET |
|
| 5 | IRFR110 |
Intersil Corporation |
N-Channel Power MOSFETs |
|
| 6 | IRFR110 |
Vishay Siliconix |
Power MOSFET |
|
| 7 | IRFR110 |
Fairchild Semiconductor |
N-Channel Power MOSFETs |
|
| 8 | IRFR110 |
International Rectifier |
Power MOSFET |
|
| 9 | IRFR110A |
Samsung |
Power MOSFET |
|
| 10 | IRFR120 |
International Rectifier |
POWER MOSFET |
|
| 11 | IRFR120 |
Intersil Corporation |
N-Channel Power MOSFETs |
|
| 12 | IRFR120 |
Vishay Siliconix |
Power MOSFET |
|