IRFR1018EPbF - International Rectifier

IRFR1018EPbF Power MOSFET

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability PD - 97129 IRFR1018EPbF .

Features

rature Range Soldering Temperature, for 10 seconds (1.6mm from case) Avalanche Characteristics EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy e Avalanche Current d Repetitive Avalanche Energy g Thermal Resistance Symbol Parameter RθJC RθJA RθJA Junction-to-Case k Junction-to-Ambient (PCB Mount) jk Junction-to-Ambient k Notes  through ‰ are on page 2 www.irf.com D Drain Max. 79c 56c 56 315 110 0.76 ± 20 21 -55 to + 175 300 S Source Units A W W/°C V V/ns °C 88 47 11 Typ.
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  – Max. 1.32 40 110 mJ A mJ Units °C/W 1 3/8/08 IRFR/U1018EPbF Static @ TJ = 25°C (u.