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IRFR110 |
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| Part Number | IRFR110 |
| Manufacturer | Fairchild Semiconductor |
| Description | Data Sheet IRFR110, IRFU110 January 2002 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guarante... |
| Features |
• 4.7A, 100V • rDS(ON) = 0.540Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S Packaging JEDEC TO-251AA SOURCE DRAIN GATE DRAIN (FLANGE) JEDEC TO-252AA GATE SOURCE DRAIN (FLANGE) ©2002 Fairchild Semiconductor Corporation IRFR110, IRFU110 Rev. B IRFR110, IRFU110 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to So... |
| Document |
 IRFR110 Data Sheet
PDF 95.15KB |
| Distributor | Stock | Price | Buy |
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