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IRFR1018E |
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| Part Number | IRFR1018E |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor IRFR1018E, IIRFR1018E ·FEATURES ·Static drain-source on-resistance: RDS(on)≤8.4mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust ... |
| Features |
·Static drain-source on-resistance: RDS(on)≤8.4mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Speed Power Switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 79 IDM Drain Current-Single Pulsed 315 PD Total Dissipation @TC=25℃ 110 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rt... |
| Document |
 IRFR1018E Data Sheet
PDF 238.06KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRFR1018EPbF |
International Rectifier |
Power MOSFET |
|
| 2 | IRFR1010Z |
International Rectifier |
AUTOMOTIVE MOSFET |
|
| 3 | IRFR1010Z |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IRFR1010ZPBF |
International Rectifier |
AUTOMOTIVE MOSFET |
|
| 5 | IRFR110 |
Intersil Corporation |
N-Channel Power MOSFETs |
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