IRFP442R - Inchange Semiconductor

IRFP442R N-Channel MOSFET Transistor

·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Temperatur.

Features

·Drain Current
  –ID= 7A@ TC=25℃
·Drain Source Voltage- : VDSS= 500V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 1.1Ω(Max)
·Fast Switching
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature .