PD - 97309A IRFP4410ZPbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt.
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Avalanche Characteristics
EAS (T hermally limited) IAR EAR
dSingle Pulse Avalanche Energy ÃAvalanche Current fRepetitive Avalanche Energy
Thermal Resistance
Symbol RπJC
Parameter
jJu n ctio n- to- Ca se
RπCS RπJA
Case-to-Sink, Flat Greased Surface
jJu n ctio n- to- A mb ie nt
www.irf.com
Max. 97 69 390 230 1.5 ± 20 16
-55 to + 175
300
x x10lb in (1.1N m)
242 See Fig. 14, 15, 22a, 22b,
Typ.
–
–
– 0.24
–
–
–
Max. 0.65
–
–
– 40
Units A W
W/°C V
V/ns °C
mJ A mJ
Units °C/W
1
03/07/08
IRFP4410ZPbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
V(BR)DSS ∆V(BR).
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFP4410Z |
INCHANGE |
N-Channel MOSFET | |
2 | IRFP441R |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
3 | IRFP440 |
Fairchild Semiconductor |
Power MOSFET | |
4 | IRFP440 |
International Rectifier |
Power MOSFET | |
5 | IRFP440 |
Intersil Corporation |
N-Channel Power MOSFET | |
6 | IRFP440 |
Vishay Siliconix |
Power MOSFET | |
7 | IRFP440A |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
8 | IRFP440A |
Samsung |
Power MOSFET | |
9 | IRFP440B |
Fairchild Semiconductor |
500V N-Channel MOSFET | |
10 | IRFP440PBF |
International Rectifier |
HEXFET Power MOSFET | |
11 | IRFP440R |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
12 | IRFP442R |
Inchange Semiconductor |
N-Channel MOSFET Transistor |