·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 450 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 8 A IDM Drain Current-Single Pluse 32 A PD Total Dissipation @TC=25℃ 125 W TJ Max. Operati.
·Drain Current
–ID= 8A@ TC=25℃
·Drain Source Voltage-
: VDSS= 450V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.85Ω(Max)
·Fast Switching
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
450
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
8
A
IDM
Drain Current-Single Pluse
32
A
PD
Total Dissipation @TC=25℃.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFP4410Z |
INCHANGE |
N-Channel MOSFET | |
2 | IRFP4410ZPBF |
International Rectifier |
Power MOSFET | |
3 | IRFP440 |
Fairchild Semiconductor |
Power MOSFET | |
4 | IRFP440 |
International Rectifier |
Power MOSFET | |
5 | IRFP440 |
Intersil Corporation |
N-Channel Power MOSFET | |
6 | IRFP440 |
Vishay Siliconix |
Power MOSFET | |
7 | IRFP440A |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
8 | IRFP440A |
Samsung |
Power MOSFET | |
9 | IRFP440B |
Fairchild Semiconductor |
500V N-Channel MOSFET | |
10 | IRFP440PBF |
International Rectifier |
HEXFET Power MOSFET | |
11 | IRFP440R |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
12 | IRFP442R |
Inchange Semiconductor |
N-Channel MOSFET Transistor |