These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited.
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• 8.5A, 500V, RDS(on) = 0.8Ω @VGS = 10 V Low gate charge ( typical 41 nC) Low Crss ( typical 35 pF) Fast switching 100% avalanche tested Improved dv/dt capability
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TO-3P
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IRFP Series
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Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
IRFP440B 500 8.5 5.4 34 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W/°C °C °C
Gate-Source Voltage.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFP440 |
Fairchild Semiconductor |
Power MOSFET | |
2 | IRFP440 |
International Rectifier |
Power MOSFET | |
3 | IRFP440 |
Intersil Corporation |
N-Channel Power MOSFET | |
4 | IRFP440 |
Vishay Siliconix |
Power MOSFET | |
5 | IRFP440A |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
6 | IRFP440A |
Samsung |
Power MOSFET | |
7 | IRFP440PBF |
International Rectifier |
HEXFET Power MOSFET | |
8 | IRFP440R |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
9 | IRFP4410Z |
INCHANGE |
N-Channel MOSFET | |
10 | IRFP4410ZPBF |
International Rectifier |
Power MOSFET | |
11 | IRFP441R |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
12 | IRFP442R |
Inchange Semiconductor |
N-Channel MOSFET Transistor |