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IRFP150N - Inchange Semiconductor

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IRFP150N N-Channel MOSFET Transistor

isc N-Channel MOSFET Transistor IRFP150N,IIRFP150N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤36mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·Fully Avalanche Rated ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Dr.

Features


·Static drain-source on-resistance: RDS(on)≤36mΩ
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·DESCRITION
·Fast switching
·Fully Avalanche Rated
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 42 IDM Drain Current-Single Pulsed 140 PD Total Dissipation @TC=25℃ 160 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS SYMBOL PA.

The same part from a different manufacturer

Datasheet IRFP150N - International Rectifier IRFP150N

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on.

Datasheet IRFP150N - ARTS CHIP IRFP150N

Fifth Generation HEXFETs from Artschip utilize advanced processing techniques to achieve extremely low on-resistance per.

Datasheet IRFP150N - Fairchild Semiconductor IRFP150N

IRFP150N Data Sheet January 2002 44A, 100V, 0.030 Ohm, N-Channel Power MOSFET Packaging JEDEC TO-247 SOURCE DRAIN GATE .

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