·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 100 ±20 V V ID Drain Current-Continuous 23 A IDM Drain Current-Single Pluse 92 A PD Total Dissipation @TC=25℃ 60 W TJ Max. Operating Junctio.
·Drain Current
–ID= 23A@ TC=25℃
·Drain Source Voltage-
: VDSS= 100V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.055Ω(Max)
·Fast Switching
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Continuous
100 ±20
V V
ID Drain Current-Continuous
23 A
IDM Drain Current-Single Pluse
92 A
PD Total Dissipation @TC=25℃
60 W
TJ
Max. Operating Junction Temperature
-55~150 ℃
Tstg Storage Temperature
-55~150 ℃
THERMAL CHARACTE.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFP150 |
IXYS Corporation |
(IRFP150 - IRFP153) HIGH VOLTAGE POWER MOSFET DIE | |
2 | IRFP150 |
Harris |
N-Channel Power MOSFETs | |
3 | IRFP150 |
STMicroelectronics |
N-Channel MOSFET | |
4 | IRFP150 |
Vishay |
Power MOSFET | |
5 | IRFP150 |
Fairchild Semiconductor |
N-Channel Power MOSFET | |
6 | IRFP150 |
INCHANGE |
N-Channel MOSFET | |
7 | IRFP150A |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
8 | IRFP150A |
Fairchild Semiconductor |
Advanced Power MOSFET | |
9 | IRFP150M |
INCHANGE |
N-Channel MOSFET | |
10 | IRFP150MPBF |
INCHANGE |
N-Channel MOSFET | |
11 | IRFP150MPBF |
International Rectifier |
Power MOSFET | |
12 | IRFP150MPbF |
Infineon |
MOSFET |