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isc N-Channel MOSFET Transistor IRFP150M，IIRFP150M ·FEATURES ·Static drain-source on-resistance: RDS(on)≤36mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·Fully Avalanche Rated ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Dr.
·Static drain-source on-resistance:
RDS(on)≤36mΩ
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Fast switching
·Fully Avalanche Rated
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
100
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
42
IDM
Drain Current-Single Pulsed
140
PD
Total Dissipation @TC=25℃
160
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PA.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRFP150 |
IXYS Corporation |
(IRFP150 - IRFP153) HIGH VOLTAGE POWER MOSFET DIE |
|
| 2 | IRFP150 |
Harris |
N-Channel Power MOSFETs |
|
| 3 | IRFP150 |
STMicroelectronics |
N-Channel MOSFET |
|
| 4 | IRFP150 |
Vishay |
Power MOSFET |
|
| 5 | IRFP150 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 6 | IRFP150 |
INCHANGE |
N-Channel MOSFET |
|
| 7 | IRFP150A |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 8 | IRFP150A |
Fairchild Semiconductor |
Advanced Power MOSFET |
|
| 9 | IRFP150FI |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 10 | IRFP150MPBF |
INCHANGE |
N-Channel MOSFET |
|
| 11 | IRFP150MPBF |
International Rectifier |
Power MOSFET |
|
| 12 | IRFP150MPbF |
Infineon |
MOSFET |
|