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IRFP150 N-Channel MOSFET

iscN-Channel MOSFET Transistor IRFP150 ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤55mΩ @VGS=10V ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL.

Features


·Low drain-source on-resistance: RDS(ON) ≤55mΩ @VGS=10V
·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·DESCRITION
·Switching Voltage Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 41 A IDM Drain Current-Single Pulsed 160 A PD Total Dissipation @TC=25℃ 230 W Tj Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature.

The same part from a different manufacturer

Datasheet IRFP150 - Vishay IRFP150

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized .

Datasheet IRFP150 - STMicroelectronics IRFP150

IRFP 150/FI-151/FI IRFP 152/FI-153/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRFP150 IRFP150FI IRFP151.

Datasheet IRFP150 - IXYS Corporation IRFP150

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Datasheet IRFP150 - Harris IRFP150

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designe.

Datasheet IRFP150 - Fairchild Semiconductor IRFP150

N ESIG W D CT E N FOR ODU DED UTE PR N E STIT OMM REC LE SUB 150N T O N FP SIB Data IR Sheet POS S IRFP150 January 200.

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