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IRFD211 |
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| Part Number | IRFD211 |
| Manufacturer | GE |
| Description | ~~D~[P~U FIELD EFFECT POWER TRANSISTOR IRFD21 0,211 D82BN2,M2 0.6 AMPERES 200, 150 VOLTS RDS(ON) = 1.5 il This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS te... |
| Features |
• Polysilicon gate - Improved stability and reliability • No secondary breakdown - Excellent ruggedness • Ultra-fast switching - Independent of temperature • Voltage controlled - High transconductance • Low input capacitance - Reduced drive requirement • Excellent thermal stability - Ease of paralleling N-CHANNEL CASE STYLE 4-PIN DIP ... |
| Document |
 IRFD211 Data Sheet
PDF 179.77KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRFD210 |
Intersil Corporation |
N-Channel Power MOSFET |
|
| 2 | IRFD210 |
International Rectifier |
Power MOSFET |
|
| 3 | IRFD210 |
GE |
FIELD EFFECT POWER TRANSISTOR |
|
| 4 | IRFD210PBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 5 | IRFD212 |
GE |
FIELD EFFECT POWER TRANSISTOR |
|