IRFB9N65A - INCHANGE

IRFB9N65A N-Channel MOSFET

iscN-Channel MOSFET Transistor IRFB9N65A ·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.93Ω (MAX) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL.

Features

·Low drain-source on-resistance: RDS(ON) =0.93Ω (MAX)
·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·DESCRITION
·Switching Voltage Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 8.5 A IDM Drain Current-Single Pulsed 21 A PD Total Dissipation @TC=25℃ 167 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature .