IRFB9N30A - International Rectifier

IRFB9N30A Power MOSFET

Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and .

Features

nt Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 9.3 5.9 37 96 0.77 ± 30 160 9.3 9.6 4.6 -55 to + 150 300 (1.6mm from case ) 10 lbf
•in (1.1N
•m) Units A W W/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ.
  –
  –
  – 0.50
  –
  –
  – Max. 1.3
  –
  –
  – 62 Units °C/W www.irf.com 1 10/7/98 IRFB9N30A Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR).