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IRFB9N65A |
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| Part Number | IRFB9N65A |
| Manufacturer | INCHANGE |
| Description | iscN-Channel MOSFET Transistor IRFB9N65A ·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.93Ω (MAX) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum ... |
| Features |
·Low drain-source on-resistance: RDS(ON) =0.93Ω (MAX) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 8.5 A IDM Drain Current-Single Pulsed 21 A PD Total Dissipation @TC=25℃ 167 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature ... |
| Document |
 IRFB9N65A Data Sheet
PDF 279.89KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRFB9N65 |
International Rectifier |
Power MOSFET |
|
| 2 | IRFB9N65A |
International Rectifier |
Power MOSFET |
|
| 3 | IRFB9N65APBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 4 | IRFB9N60 |
International Rectifier |
Power MOSFET |
|
| 5 | IRFB9N60A |
Vishay |
Power MOSFET |
|