IRFB9N65APBF - International Rectifier

IRFB9N65APBF HEXFET Power MOSFET

PD - 95416 IRFB9N65APbF SMPS MOSFET Applications l l l l HEXFET® Power MOSFET Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching Lead-Free VDSS 650V RDS(on) max 0.93Ω ID 8.5A Benefits l l l Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characteri.

Features

ngle Transistor Flyback Single Transistor Forward Notes  through … are on page 8 www.irf.com 1 06/16/04 IRFB9N65APbF Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Of.