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IRF820 - STMicroelectronics

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IRF820 N-CHANNEL MOSFET

This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWE.

Features

d) Total Dissipation at Tc = 25 C Derating F actor Peak Diode Recovery voltage slope Storage T emperature Max. O perating Junction Temperature o o o Value 500 500 ± 20 2.5 1.6 10 80 0.64 3.5 -65 to 150 150 Uni t V V V A A A W W/ C V/ ns o o o C C (
•) Pulse width limited by safe operating area (1) ISD ≤ 2.5 A, di/dt ≤ 50 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX First Digit of the Datecode Being Z or K Identifies Silicon Characterized in this Datasheet August 1998 1/8 IRF820 THERMAL DATA R t hj-ca se Rthj -amb R thc- si nk Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambi.

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·Drain Current –ID= 2.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) =.

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IRF820 Data Sheet July 1999 File Number 1581.4 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFET This N-Channel enhancement.

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These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as sw.

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