This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWE.
d) Total Dissipation at Tc = 25 C Derating F actor Peak Diode Recovery voltage slope Storage T emperature Max. O perating Junction Temperature
o o o
Value 500 500 ± 20 2.5 1.6 10 80 0.64 3.5 -65 to 150 150
Uni t V V V A A A W W/ C V/ ns
o o o
C C
(
•) Pulse width limited by safe operating area (1) ISD ≤ 2.5 A, di/dt ≤ 50 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX First Digit of the Datecode Being Z or K Identifies Silicon Characterized in this Datasheet
August 1998
1/8
IRF820
THERMAL DATA
R t hj-ca se
Rthj -amb
R thc- si nk Tl
Thermal Resistance Junction-case Max Thermal Resistance Junction-ambi.
·Drain Current –ID= 2.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) =.
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designe.
IRF820 Data Sheet July 1999 File Number 1581.4 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFET This N-Channel enhancement.
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized.
These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as sw.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRF820A |
International Rectifier |
Power MOSFET | |
2 | IRF820A |
Vishay |
Power MOSFET | |
3 | IRF820AL |
International Rectifier |
Power MOSFET | |
4 | IRF820AL |
Vishay |
Power MOSFET | |
5 | IRF820ALPBF |
International Rectifier |
HEXFET Power MOSFET | |
6 | IRF820APBF |
International Rectifier |
HEXFET Power MOSFET | |
7 | IRF820AS |
International Rectifier |
Power MOSFET | |
8 | IRF820AS |
Vishay |
Power MOSFET | |
9 | IRF820ASPBF |
International Rectifier |
HEXFET Power MOSFET | |
10 | IRF820B |
Fairchild Semiconductor |
500V N-Channel MOSFET | |
11 | IRF820FI |
STMicroelectronics |
(IRF820 / IRF822) N-Channel Enhancement Mode Power MOS Transistors | |
12 | IRF820FI |
INCHANGE |
N-Channel MOSFET |