PD - 95533 SMPS MOSFET Applications Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High speed power switching l Lead-Free l HEXFET® Power MOSFET IRF820ASPbF IRF820ALPbF ID 2.5A VDSS 500V RDS(on) max 3.0Ω Benefits Low Gate Charge Qg Results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Char.
lbf
•in (1.1N
•m)
Units
A W W/°C V V/ns °C
Typical SMPS Topologies:
l l
Two Transistor Forward Half Bridge and Full Bridge
Notes
through
are on page 8
www.irf.com
1
7/20/04
IRF820AS/LPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 500
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRF820AL |
International Rectifier |
Power MOSFET | |
2 | IRF820AL |
Vishay |
Power MOSFET | |
3 | IRF820A |
International Rectifier |
Power MOSFET | |
4 | IRF820A |
Vishay |
Power MOSFET | |
5 | IRF820APBF |
International Rectifier |
HEXFET Power MOSFET | |
6 | IRF820AS |
International Rectifier |
Power MOSFET | |
7 | IRF820AS |
Vishay |
Power MOSFET | |
8 | IRF820ASPBF |
International Rectifier |
HEXFET Power MOSFET | |
9 | IRF820 |
ART CHIP |
N-Channel Power MOSFET | |
10 | IRF820 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
11 | IRF820 |
Motorola Inc |
Power MOSFET | |
12 | IRF820 |
STMicroelectronics |
N-CHANNEL MOSFET |