These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited.
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• 2.5A, 500V, RDS(on) = 2.6Ω @VGS = 10 V Low gate charge ( typical 14 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability
D
G G DS
TO-220
IRF Series
GD S
TO-220F
IRFS Series
S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
IRF820B 500 2.5 1.6 8.0 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
IRFS820B 2.5
* 1.6
* 8.0
* 200 2.5 4.9 5.5
Units V A .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRF820 |
ART CHIP |
N-Channel Power MOSFET | |
2 | IRF820 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
3 | IRF820 |
Motorola Inc |
Power MOSFET | |
4 | IRF820 |
STMicroelectronics |
N-CHANNEL MOSFET | |
5 | IRF820 |
Intersil Corporation |
N-Channel Power MOSFET | |
6 | IRF820 |
International Rectifier |
Power MOSFET | |
7 | IRF820 |
Fairchild Semiconductor |
N-Channel Power MOSFET | |
8 | IRF820 |
Harris |
N-Channel Power MOSFETs | |
9 | IRF820 |
Vishay |
Power MOSFET | |
10 | IRF820A |
International Rectifier |
Power MOSFET | |
11 | IRF820A |
Vishay |
Power MOSFET | |
12 | IRF820AL |
International Rectifier |
Power MOSFET |