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IRF7103PBF |
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| Part Number | IRF7103PBF |
| Manufacturer | International Rectifier |
| Description | The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, mult... |
| Features |
r Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range
Max. 3.0 2.3 10 2.0 0.016 ± 20 4.5
-55 to + 150
Units
A
W W/°C
V V/nS °C
Thermal Resistance Ratings
Parameter
RθJA
Maximum Junction-to-Ambient
Min.
Typ.
Max. 62.5
Units °C/W
02/09/10
IRF7103PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
50 V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(ON)
Stat... |
| Document |
 IRF7103PBF Data Sheet
PDF 303.35KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF7103 |
International Rectifier |
Power MOSFET |
|
| 2 | IRF7103Q |
International Rectifier |
Power MOSFET |
|
| 3 | IRF7103QPbF |
International Rectifier |
Power MOSFET |
|
| 4 | IRF710 |
Intersil Corporation |
N-Channel Power MOSFET |
|
| 5 | IRF710 |
INCHANGE |
N-Channel MOSFET |
|