Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide .
reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. SO-8 Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TC = 25°C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Max. -2.3 -1.8 -10 2.0 0.016 ± 12 -3.0 -55 to + 150 Units A W W/°C V V/nS.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRF7104 |
International Rectifier |
HEXFET Power MOSFET | |
2 | IRF710 |
Intersil Corporation |
N-Channel Power MOSFET | |
3 | IRF710 |
INCHANGE |
N-Channel MOSFET | |
4 | IRF710 |
ART CHIP |
N-Channel MOSFET | |
5 | IRF710 |
Vishay |
Power MOSFET | |
6 | IRF7101 |
International Rectifier |
Power MOSFET | |
7 | IRF7101PBF |
International Rectifier |
Power MOSFET | |
8 | IRF7102 |
International Rectifier |
Power MOSFET | |
9 | IRF7103 |
International Rectifier |
Power MOSFET | |
10 | IRF7103PBF |
International Rectifier |
Power MOSFET | |
11 | IRF7103Q |
International Rectifier |
Power MOSFET | |
12 | IRF7103QPbF |
International Rectifier |
Power MOSFET |