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INCHANGE Semiconductor isc N-Channel Mosfet Transistor ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements isc Product Specification IRF612 ·DESCRITION ·Designed for high speed applications, such as switching power supplies , AC and DC motor controls,relay and solenoid drivers and other pulse. ·.
·Low RDS(on)
·VGS Rated at ±20V
·Silicon Gate for Fast Switching Speed
·Rugged
·Low Drive Requirements
isc Product Specification
IRF612
·DESCRITION
·Designed for high speed applications,
such as switching power supplies , AC and DC motor controls,relay and solenoid drivers and other pulse.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Continuous
200 ±20
V V
ID Drain Current-Continuous
2.6 A
IDM Drain Current-Single Plused
6.5 A
PD Total Dissipation @TC=25℃
43 W
Tj Max. Operating Junction Temperature -55~175 ℃
.
IRF612 - GE
DO D[]~[F~ FIELD EFFECT POWER TRANSISTOR IRF612,613 2.0 AMPERES 200, 150 VOLTS ROS(ON) = 2.4 n This series of N-Channe.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRF610 |
Inchange Semiconductor |
N-Channel Mosfet Transistor |
|
| 2 | IRF610 |
Intersil Corporation |
N-Channel Power MOSFET |
|
| 3 | IRF610 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 4 | IRF610 |
Vishay |
Power MOSFET |
|
| 5 | IRF6100 |
International Rectifier |
HEXFET Power MOSFET |
|
| 6 | IRF6100PBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 7 | IRF610A |
Inchange Semiconductor |
N-Channel Mosfet Transistor |
|
| 8 | IRF610A |
Fairchild Semiconductor |
Advanced Power MOSFET |
|
| 9 | IRF610B |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|
| 10 | IRF610L |
Vishay |
Power MOSFET |
|
| 11 | IRF610S |
Vishay |
Power MOSFET |
|
| 12 | IRF611 |
Inchange Semiconductor |
N-Channel Mosfet Transistor |
|
