Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in .
• Surface mount
• Available in tape and reel
• Dynamic dV/dt rating
• Repetitive avalanche rated
Available
• Fast switching
• Ease of paralleling
Available
• Simple drive requirements
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details.
DESCRIPTION Third generation power MOSFETs from .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRF610 |
Inchange Semiconductor |
N-Channel Mosfet Transistor | |
2 | IRF610 |
Intersil Corporation |
N-Channel Power MOSFET | |
3 | IRF610 |
Fairchild Semiconductor |
N-Channel Power MOSFET | |
4 | IRF610 |
Vishay |
Power MOSFET | |
5 | IRF6100 |
International Rectifier |
HEXFET Power MOSFET | |
6 | IRF6100PBF |
International Rectifier |
HEXFET Power MOSFET | |
7 | IRF610A |
Inchange Semiconductor |
N-Channel Mosfet Transistor | |
8 | IRF610A |
Fairchild Semiconductor |
Advanced Power MOSFET | |
9 | IRF610B |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
10 | IRF610S |
Vishay |
Power MOSFET | |
11 | IRF611 |
Inchange Semiconductor |
N-Channel Mosfet Transistor | |
12 | IRF611 |
Fairchild Semiconductor |
N-Channel Power MOSFET |