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IRF612 |
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| Part Number | IRF612 |
| Manufacturer | GE |
| Description | DO D[]~[F~ FIELD EFFECT POWER TRANSISTOR IRF612,613 2.0 AMPERES 200, 150 VOLTS ROS(ON) = 2.4 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to... |
| Features |
• Polysilicon gate - Improved stability and reliability • No secondary breakdown - Excellent ruggedness • Ultra-fast switching - Independent of temperature • Voltage controlled - High transconductance • Low input capacitance - Reduced drive requirement • Excellent thermal stability - Ease of paralleling N-CHANNEL TERM.l TERM.2 , . - - ,.~~~:.~~... |
| Document |
 IRF612 Data Sheet
PDF 190.89KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRF610 |
Inchange Semiconductor |
N-Channel Mosfet Transistor |
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| 2 | IRF610 |
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| 3 | IRF610 |
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| 4 | IRF610 |
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| 5 | IRF6100 |
International Rectifier |
HEXFET Power MOSFET |
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