IRF610 - Inchange Semiconductor

IRF610 N-Channel Mosfet Transistor

INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF610 ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements ·DESCRITION ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay an.

Features

·Low RDS(on)
·VGS Rated at ±20V
·Silicon Gate for Fast Switching Speed
·Rugged
·Low Drive Requirements
·DESCRITION
·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 200 ±20 V V ID Drain Current-Continuous 3.3 A IDM Drain Current-Single Plused 8A PD Total Dissipation @TC=25℃ 43 W Tj Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Tem.