IRF1407L - International Rectifier

IRF1407L Power MOSFET

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for .

Features

sipate up to 2.0W in a typical surface mount application. The through-hole version (IRF1407L) is available for lowprofile applications. ID = 100AV D2Pak IRF1407S TO-262 IRF1407L Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10VX Continuous Drain Current, VGS @ 10VX Pulsed Drain Current QX Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche EnergyRX Avalanche CurrentQ Repetitive Avalanche EnergyW Peak Diode Recovery dv/dt SX O.