IRF1407SPbF - Infineon

IRF1407SPbF Power MOSFET

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for us.

Features

on. The through-hole version (IRF1407L) is available for low-profile applications. HEXFET® Power MOSFET VDSS RDS(on) ID 75V 0.0078 100A D D S G D2 Pak IRF1407SPbF S GD TO-262 Pak IRF1407LPbF G Gate D Drain S Source Base part number IRF1407LPbF IRF1407SPbF Package Type TO-262 D2-Pak Standard Pack Form Quantity Tube 50 Tape and Reel Left 800 Orderable Part Number IRF1407LPbF (Obsolete) IRF1407STRLPbF Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V  ID @ TC = 100°C IDM PD @TA = 25°C Continuous Drain Current, VGS @ 10V  P.