This Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremel.
of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRF1407 |
International Rectifier |
Power MOSFET | |
2 | IRF1407 |
INCHANGE |
N-Channel MOSFET | |
3 | IRF1407L |
International Rectifier |
Power MOSFET | |
4 | IRF1407L |
INCHANGE |
N-Channel MOSFET | |
5 | IRF1407L |
Infineon |
Power MOSFET | |
6 | IRF1407LPbF |
Infineon |
Power MOSFET | |
7 | IRF1407LPbF |
International Rectifier |
Power MOSFETs | |
8 | IRF1407S |
International Rectifier |
Power MOSFET | |
9 | IRF1407S |
INCHANGE |
N-Channel MOSFET | |
10 | IRF1407S |
Infineon |
Power MOSFET | |
11 | IRF1407SPbF |
Infineon |
Power MOSFET | |
12 | IRF1407SPbF |
International Rectifier |
Power MOSFETs |