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IRF1407L |
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| Part Number | IRF1407L |
| Manufacturer | International Rectifier |
| Description | Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switc... |
| Features |
sipate up to 2.0W in a typical surface mount application. The through-hole version (IRF1407L) is available for lowprofile applications.
ID = 100AV
D2Pak IRF1407S
TO-262 IRF1407L
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10VX Continuous Drain Current, VGS @ 10VX Pulsed Drain Current QX Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche EnergyRX Avalanche CurrentQ Repetitive Avalanche EnergyW Peak Diode Recovery dv/dt SX O... |
| Document |
 IRF1407L Data Sheet
PDF 159.79KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRF1407 |
International Rectifier |
Power MOSFET |
|
| 2 | IRF1407 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IRF1407L |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IRF1407L |
Infineon |
Power MOSFET |
|
| 5 | IRF1407LPbF |
Infineon |
Power MOSFET |
|