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IRF1010EZLPbF |
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| Part Number | IRF1010EZLPbF |
| Manufacturer | International Rectifier |
| Description | Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of t... |
| Features |
O O O O O O O
IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF
HEXFET® Power MOSFET
D
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free
G
VDSS = 60V RDS(on) = 8.5mΩ
S
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanch... |
| Document |
 IRF1010EZLPbF Data Sheet
PDF 404.58KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF1010EZL |
International Rectifier |
AUTOMOTIVE MOSFET |
|
| 2 | IRF1010EZ |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IRF1010EZ |
International Rectifier |
AUTOMOTIVE MOSFET |
|
| 4 | IRF1010EZPbF |
International Rectifier |
POWER MOSFET |
|
| 5 | IRF1010EZS |
International Rectifier |
AUTOMOTIVE MOSFET |
|