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PD - 90640 REPETITIVE A V ALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) IRF054 60V 0.022Ω ID 45A* IRF054 60V, N-CHANNEL The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “Sta.
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Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements Ease of Paralleling
Absolute Maximum Ratings
Parameter
ID @ VGS = 0V, TC = 25°C ID @ VGS =0V, TC = 100°C I DM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight
* Current limi.
IRF054 - Inchange Semiconductor
·Drain Current ID=45A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.0.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRF054SMD |
Seme LAB |
N-CHANNEL POWER MOSFET |
|
| 2 | IRF034 |
International Rectifier |
MOSFET transistor |
|
| 3 | IRF034 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 4 | IRF044 |
Seme LAB |
N-CHANNEL POWER MOSFET |
|
| 5 | IRF044 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 6 | IRF044 |
International Rectifier |
MOSFET transistor |
|
| 7 | IRF044SMD |
Seme LAB |
N-CHANNEL POWER MOSFET |
|
| 8 | IRF-24 |
Vishay |
Inductors |
|
| 9 | IRF-46 |
Vishay Siliconix |
Inductors Epoxy Conformal Coated |
|
| 10 | IRF100 |
ETC |
HIGH POWER WIRE WOUND RESISTORS |
|
| 11 | IRF100B201 |
International Rectifier |
Power MOSFET |
|
| 12 | IRF100B201 |
INCHANGE |
N-Channel MOSFET |
|