LAB MECHANICAL DATA Dimensions in mm (inches) SEME IRF044SMD N–CHANNEL POWER MOSFET 3 .6 0 (0 .1 4 2 ) M a x . 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 3 0 .7 6 (0 .0 3 0 ) m in . VDSS ID(cont) RDS(on) FEATURES 60V 34A 0.040W 1 0 .6 9 (0 .4 2 1 ) 1 .
60V 34A 0.040W
1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )
2
1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 )
• HERMETICALLY SEALED SURFACE MOUNT PACKAGE
• SMALL FOOTPRINT
– EFFICIENT USE OF PCB SPACE.
9 .6 9 .3 1 1 .5 1 1 .2
7 (0 8 (0 8 (0 8 (0
.3 8 .3 6 .4 5 .4 4
1 )
9 ) 6 ) 4 )
0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 )
• SIMPLE DRIVE REQUIREMENTS
• LIGHTWEIGHT
• HIGH PACKING DENSITIES Note: IRFNxxx also available with pins 1 and 3 reversed.
SMD1
– Surface Mount Package
Pad 1
– Gate Pad 2
– Drain Pad 3
– Source
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS ID ID IDM PD.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRF044 |
Seme LAB |
N-CHANNEL POWER MOSFET | |
2 | IRF044 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
3 | IRF044 |
International Rectifier |
MOSFET transistor | |
4 | IRF034 |
International Rectifier |
MOSFET transistor | |
5 | IRF034 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
6 | IRF054 |
International Rectifier |
MOSFET transistor | |
7 | IRF054 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
8 | IRF054SMD |
Seme LAB |
N-CHANNEL POWER MOSFET | |
9 | IRF-24 |
Vishay |
Inductors | |
10 | IRF-46 |
Vishay Siliconix |
Inductors Epoxy Conformal Coated | |
11 | IRF100 |
ETC |
HIGH POWER WIRE WOUND RESISTORS | |
12 | IRF100B201 |
International Rectifier |
Power MOSFET |